High Speed Infrared Emitter

The OPE5T87 ia GaAlAs infrared emitting diode is designed for high power, low forward voltage and high speed rise/fall time. This device is optimized for speed and efficiency at emission wavelength 880um and has a high radiant efficiency over a wide range of forward currents. This device is packaged T1-3/4 plastic package and has narrow beam angle with lensed package and cup frame. It is suited as the emitter of data transmission without cable.

Features

• Ultra high-speed : 25ns rise time
• 880nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• For pulse operating

Applications

• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• For wireless digital data transmission

Storage

• Condition : 5°C~35°C R.H 60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants.
  *Please take proper steps in order to secure reliability and safety in required conditions and environments for this device.